Publications

• Arthur H. Edwards, P. C. Taylor, Kristy A. Campbell, and Andrew C. Pineda, First-principles study of ⁷⁵As NQR in arsenic-chalcogenide compounds J. Phys. Cond. Matt. 23(5), 055502 (2011).
• Andrew C. Pineda and Shashi P. Karna, (Hyper)polarizabilities of isolated GaN nanoclusters, Chem. Phys. Lett. 429, 169-173 (2006).
• Arthur H. Edwards, Andrew C. Pineda, Peter A. Schultz, Marcus G. Martin, Aidan P. Thompson, Harold P. Hjalmarson, Cyrus J. Umrigar, Electronic structure of intrinsic defects in crystalline germanium telluride, Phys. Rev. B 73, 045210 (2006).
• Kah Chun Lau, Ranjit Pati, Ravindra Pandey, and Andrew C. Pineda, First-principles study of the stability and electronic properties of sheets and nanotubes of elemental boron, Chem. Phys. Lett. 418, 549-554 (2006).
• Arthur H. Edwards, Andrew C. Pineda, Peter A. Schultz, Marcus G. Martin, Aidan P. Thompson, and Harold P. Hjalmarson,   Theory of persistent, p-type, metallic conduction in c-GeTe, J. Phys. Cond. Matt. 17(32), L329 (2005).
• Ranjit Pati, Andrew C. Pineda, Ravindra Pandey, and Shashi P. Karna,   Ab Initio Calculations of Electron Transfer in Carboranes, Chem. Phys. Lett., 406(4-6), 483 (2005).
• Andrew C. Pineda and Shashi P. Karna, Size Dependence of the Linear and Non-linear Optical Properties of GaN Nanoclusters, Materials Research Society Proceedings (Symposium DD: Organic and Nanocomposite Optical Materials), Volume 846, DD6.6 (2005).
• Andrew C. Pineda, Shashi P. Karna, Henry A. Kurtz,Walter M. Shedd, and Robert D. Pugh,   The Effect of Network Topology on Proton Trapping in Amorphous SiO₂, IEEE Transactions on Nuclear Science, 48(6), 2081 (2001).
• Shashi P. Karna, Henry A. Kurtz, Andrew C. Pineda, Walter M. Shedd, and Robert D. Pugh,   Point Defects in Si-SiO₂ Systems: Current Understanding, in Defects in SiO₂ and Related Dielectrics: Science and Technology, G. Pacchioni, L. Skuja, and D. L. Griscom, Eds., NATO Science Series, p. 599-615 (Kluwer Academic Publishers, 2000).
• S.P. Karna, A.C. Pineda, R.D. Pugh, W.M.Shedd, and T.R. Oldham,   Electronic Structure Theory and Mechanisms of the Oxide Trapped Hole Annealing Process , IEEE Transactions on Nuclear Science, 47(6), 2316 (2000).
• Andrew C. Pineda and Shashi P. Karna, Electronic Structure Theory of Radiation-Induced Defects in Si/SiO₂ , DoD HPC Users Group Conference Proceedings (June 2000).
• Andrew C. Pineda and Shashi P. Karna,   Effect of Hole Trapping on the Microscopic Structure of Oxygen Vacancy Sites in a-SiO₂, J. Phys. Chem. A, 104(20), 4699 (2000).
• S.P. Karna, A.C. Pineda, W.M. Shedd, and B.K. Singaraju,   Electronic Structure Studies of the E'_d Center in a-SiO₂, in Silicon-on-Insulator Technology and Devices IX (Proceedings Volume 99-3), P.L.F. Hemment, Ed. The Electrochemical Society, Pennington, NJ, 161 (1999).
• Andrew C. Pineda and David Ronis , Classical model for energy transfer in microspherical droplets , Phys. Rev. E, 52 (5b), 5178 (1995).
• Andrew C. Pineda, Applications of classical electrodynamics and statistical mechanics to problems in energy transfer and fluorescence, Ph.D. Thesis, Harvard University (1994).
• Andrew C. Pineda and David Ronis, Fluorescence quenching in molecules near rough metal surfaces, J. Chem. Phys., 83 (10), 5330 (1985).
• Andrew C. Pineda, Todd J. Jones and Gerald R. Van Hecke, Application of generalized van der Waals theory of homologuous nematogens -- Part 1: trans-4-ethoxy- 4'-n-alkanoyloxyazobenzenes, Liq. Cryst. Ordered Fluids, 4, 265 (1984).

News Coverage

• Chemical & Engineering News Article (SiO₂)- September 27, 1999
• Chemical & Engineering News Article (New Computer Architectures for Computational Chemistry)- April 30, 2001

Last Updated